2N657 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N657
TO-39
Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
V_CEO
100
Collector Base Voltage
V_CBO
100
Emitter Base Voltage
V_EBO
8.0
Collector Current
I_C
0.5
Power Dissipation @ Ta=25ºC
P_D
1.0
Derate Above 25ºC
5.7
Power Dissipation@ Tc=25ºC
P_D
4.0
Derate Above 25ºC
22.8
Operating And Storage Junction
T_j, T_stg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=250µA,I_B=0
Collector Base Voltage
V_CBO
I_C=100µA,I_E=0
Emitter Base Voltage
V_EBO
I_C=250µA,Ic=0
Collector Cut off Current
I_CBO
V_CB=30V, I_E=0
DC Current Gain
h_FE
I_C=200mA,V_CE=10V
Collector Emitter Saturation Voltage
*V_CE(Sat)
I_C=200mA,I_B=40mA
SMALL SIGNAL CHARACTERISTICS
Input Impedance *
| h_fe |
*Pulse Test: Pulse Length= 300µs, Duty Cycle <2%
I_B=8mA, V_CE=10V
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
MIN MAX UNITS
100
V
100
V
8.0
V
10
µA
30
90
4.0
V
0.5
KΩ
Continental Device India Limited
Data Sheet
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