2N5609 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Silicon PNP Transistors

Power Transistors
2N5609
Silicon PNP Transistors
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
V_CBO Collector to base voltage
V_CEO Collector to emitter voltage
V_EBO Emitter to base voltage
I_CP Peak collector current
I_C
Collector current
P_C Collector power dissipation
T_j Junction temperature
T_stg Storage temperature
RATING
80
80
5.0
5.0
25
150
-55~150
UNIT
V
V
V
A
A
W
Electrical Characteristics Tc=25
SYMBOL
I_CBO
I_EBO
I_CEO
V_CBO
V_(BR)CEO
V_EBO
V_CEsat-1
V_CEsat-2
V_CEsat-3
V_CEsat-4
h_FE-1
h_FE-2
h_FE-3
h_FE-4
V_BE(sat)1
V_BE(sat)2
V_BE(sat)3
f_T
t_f
t_s
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency at f = 1MHz
Fall time
Tum-off storage time
CONDITIONS
V_CB =80V;I_E=0
V_EB =5V, I_C=0
I_C=10mA,I_B=0
I_C =1A; I_B =0.1A
I_C=2.5A,V_CE=5V
I_C=1A,V_CE=2V
INCHANGE
TO-66
MIN
MAX
UNIT
10
A
10
A
80
V
0.5
V
70
200
1.0
V