2N5294 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Chip Transistor

SPEC SHEET
2N5294
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Dimension
Scribe Line Width
Top Metal
Back Metal
Raper Size
Base
Emitter
1.9mm x 1.9mm
230 ± 20µm
665µm x 315µm
555 µm x 325 µm
50µm
Al
Ti-Ni-Ag
4 inch
Absolute Max Ratings (Ta=25°C)
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Loss (Power Dissipation)
Junction Temperature
Storage Temperature
Symbol
V CBO
V CEO
V EBO
IC
PC
Tj
T stg
Max Ratings
80
70
7
4
36
-65 to +150
Unit
V
V
V
mA
W
°C
°C
(TO-220)
Note
Electrical Characteristics (Ta=25°C)
Item
Symbol
Min. Typ. Max. Unit Condition
(TO-220)
Collector-Base
B V CBO 80
-
Breakdown Voltage
Collector-Emitter
B V CEO 70
-
Breakdown Voltage
Emitter-Base
B V EBO
7
-
Breakdown Voltage
Collector Cut-Off Current I CBO
-
-
Emitter Cut-Off Current I EBO
-
-
DC Current Gain
h FE
30
-
Collector Saturation
V CE(SAT) -
-
-
V
I_C = 100 µA
-
V
I_C = 200 mA
-
V
I_E = 100 µA
-
µA VCB = V
1
mA VEB = 7V
120
-
VCE = 4 V, IC = 500mA
1
V
IC = 500mA, IB = 50mA
Probing Spec (Ta=25°C)
No.
Mode
Min.
1
V BE
-
2
B V CEO
70
3
I CBO
-
4
I EBO
-
5
I CEO
-
6
h FE
30
7
V CE(SAT) -
Limit
Max.
-
-
-
1
-
120
1
Unit
V
V
µA
mA
µA
-
V
Condition
IB=
I C = 200mA
V CB = V
V EB = 7V
V CE = V
V CE = 4 V, I C = 500A
I C = 500mA, I B = 50mA