2N2646 Datasheet, PDF (1/2 Pages) Boca Semiconductor Corporation – Silicon PN Unijuction Transistor

2N2646
2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
current and valley current as well as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
for triggering high power SCR’s.
CASE
MAXIMUM RATINGS (*)
T_J=125°C unless otherwise noted
Symbol
V_B1E
V_B2E
I_FRMS
I_EM
P_TOT
T_J
T_STG
Ratings
Base 1 – Emitter Voltage
Base 2 – Emitter Voltage
RMS Emitter Current
Emitter Peak Current
Total Power Dissipation
Maximum Junction
Storage Temperature Range
2N2646
30
30
50
2
300
150
-55 to +175
2N2647
V
V
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS
T_J=25°C unless otherwise noted, R_GK=1000Ω
Symbol
I_EO
V_(BR)B1E
Ratings
Emitter Reverse Current
Base 1 – Emitter Breakdown Voltage
I_E =100 µA
2N2646 – 2N2647
Min
Max
12
30
COMSET SEMICONDUCTORS
µA
V
1/2