2A8 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 0.5 Watts, 20 Volts, Class A Linear to 2000 MH

2A8
0.5 Watts, 20 Volts, Class A
Linear to 2000 MHz
GENERAL DESCRIPTION
The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts
of Class A, RF output power at 2000 MHz. This transistor is specifically
designed for general Class A amplifier applicatons. It utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
5.3 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
300 mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150^oC
+ 150^oC
CASE OUTLINE
55EU, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR₁
Power Out @ 1db Comp. Pt.
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2.0 GHz
Vcc = 20 Volts
Ic = 150mA
0.5
Watts
0.1 Watts
7.0 9.0
dB
20
%
30:1
BVebo Emitter to Base Breakdown
Ie = 1 mA
3.5
Volts
BVces
Collector to Emitter Breakdown Ic = 10mA
50
Volts
BVceo
Collector to Emitter Breakdown Ic = 10 mA
21
Volts
Hfe
DC Current Gain
Vce = 5 V, Ic = 100 mA 20
Cob
Capacitance
Vcb = 28V, f = 1 MHz
3.0
4.0
pF
θjc
Thermal Resistance
28
33
o_C/W
Issue September 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120