1090MP Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – 90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz

1090 MP
90 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1090MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin-
film metallization for proven highest MTTF. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
250 Watts Peak
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
60 Volts
4.0 Volts
6.0 Amps Peak
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to +150 ^oC
+ 200^oC
CASE OUTLINE
55FU, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
VSWR
Broadband Power Out
Power Input
Broadband Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025-1150 MHz 90
98
Watts
Vcc = 50 Volts
14 Watts
PW = 10 µsec
8.0 8.5
dB
DF =1%
35
38
%
F = 1090 MHz
10:1
BVebo
BVces
Cob
h_FE
θjc¹
Emitter to Base Breakdown
Ie = 1 mA
3.5
Collector to Emitter Breakdown Ie = 10 mA
65
Capacitance Collector to Base
Vcb = 50 V
DC - Current Gain
Ic= 500mA,Vcc= 5V 15
Thermal Resistance
Tc=25C
Note1: At Rated Power Output and pulse conditions.
2: Maximum Ratings are for RF Amplifier Operation
Issue Aug 1996
Volts
Volts
16
pF
120
0.6 ^oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120