IW4011B Datasheet, PDF (3/4 Pages) Estek Electronics Co. Ltd – NAND gates provide the system designer with direct implementation of the NAND function

IW4011B
DC Electrical Characteristics
(Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VIH
Minimum High-Level V_OUT=0.5 V or V_CC - 0.5 V
Input Voltage
VOUT=1.0 V or VCC - 1.0 V
VOUT=1.5 V or VCC - 1.5 V
VOUT= VCC - 0.5V
VIL
Maximum Low -Level _{VOUT= VCC - 1.0 V}
Input Voltage
VOUT= VCC - 1.5V
VCC
Guaranteed Limit
V _{-55C}
25C 125 ^Unit
C
5.0 3.5
3.5 3.5 V
10
7
7
7
15 11
11
11
5.0 1.5
1.5 1.5 V
10
3
3
3
15
4
4
4
VOH Minimum High-Level VIN=GND or VCC
Output Voltage
VOL Maximum Low-Level VIN= VCC
Output Voltage
5.0 4.95 4.95 4.95 V
10 9.95 9.95 9.95
15 14.95 14.95 14.95
5.0 0.05 0.05 0.05 V
10 0.05 0.05 0.05
15 0.05 0.05 0.05
IIN
Maximum Input
VIN= GND or VCC
Leakage Current
18 0.1 0.1 1.0 A
ICC Maximum uQ
iescent
Supply Current
(per Package)
VIN= GND or VCC
5.0 0.25
10 0.5
15 1.0
20 5.0
0.25 7.5 _A
0.5 15
1.0 30
5.0 150
IOL
Minimum Output Low V_IN= GND or V_CC
(Sink) Current
UOL=0.4 V
UOL=0.5 V
UOL=1.5 V
IOH Minimum Output
VIN= GND or VCC
High (Source) Current ^UOH^{=2.5 V}
UOH=4.6 V
UOH=9.5 V
UOH=13.5 V
mA
5.0 0.64 0.51 0.36
10 1.6
1.3 0.9
15 4.2
3.4 2.4
mA
5.0 -2.0
-1.6 -1.15
5.0 -0.64 -0.51 -0.36
10 -1.6
-1.3 -0.9
15 -4.2
-3.4 -2.4
BEIJING ESTEK ELECTRONICS CO.,LTD
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