ET50N06 Datasheet, PDF (2/4 Pages) Estek Electronics Co. Ltd – 50 Amps，60Volts N-CHANNEL MOSFET

ET50N06
Drain Currenet Continuous
Drain Current Pulsed(Note 1)
T_c=25℃
T_c=100℃
Avalanche Energy
Repetitive(Note 1)
Single Pulse(Note 2)
Peak Diode Recovery dv/dt(Note 3)
Total Power Dissipation
T_c=25℃
Derate above 25℃
Operation Junction Temperature
Storage temperature
■ THERMAL DATA
I_D
I_DP
E_AR
E_AS
dv/dt
P_D
T_J
T_STG
50
35
200
13
480
7.0
120
0.8
-55 to+150
-55~+150
A
A
A
mJ
mJ
v/ns
W
w/℃
℃
℃
PARAMETER
SYMBOL
TYP
Thermal Resistance Junction-Ambient
θJA
-
Thermal Resistance Junction-Case
θJC
-
Thermal Resistance Case-Sink
θCS
0.5
MAX
62.5
1.24
-
UNIT
℃/W
℃/W
℃/W
■ ELECTRICAL CHARACTERISTICS（T_J=25℃,unless Otherwise specified.）
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV_DSS
I_DSS
Gate-Body Leakage
Forward
Current
Reverse
Breakdown Voltage Temperature
I_GSS
△BV_DSS/△TJ
V_GS=0V,I_D=250μA
V_DS=60V,V_GS=0V
V_DS=48V,T_C=150℃
V_GS=20V,V_DS=0V
V_GS=-20V,V_DS=0V
I_D=250μA
60
0.06
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250μA
V_DS=10V,I_D=25A
2.2
0.019
Dynamic Characteristics
Input Capacitance
C_ISS
900
Output Capacitance
C_OSS
V_DS=25V,V_GS=0V,f=1MH_Z
430
Reverse Transfer Capacitance
C_RSS
80
■ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t_D(ON)
40
t_R
V_DD=30V,I_D=25A,R_G=50Ω
100
t_D(OFF)
(Note4,5)
90
t_F
80
Q_G
30
Q_GS
V_DS=48V,V_GS=10V,I_D=50A(Note4,5)
9.6
Q_GD
10
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
V_SD
V_GS=0V,I_SD=50A
I_SD
Pulsed Drain-Source Current
I_SM
Reverse Recovery Time
t_RR
54
MAX UNIT
1
10
100
-100
V
μA
μA
nA
nA
V/℃
3.8
V
0.023
Ω
1220
pF
550
pF
100
pF
MAX UNIT
60
ns
200
ns
180
ns
160
ns
40
nC
-
nC
-
nC
1.5
V
50
A
200
A
ns
2
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