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E44N Datasheet, PDF (2/2 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET | |||
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E 44N / E 44NB
HEXFET® Power MOSFET
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche EnergyÂ
Min. Typ. Max. Units
Conditions
55/54 âââ âââ V GSV= 0V, ID = 250µA
âââ 0.058 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 17.5 m⦠VGS = 10V, ID = 25A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
17 âââ âââ S VDS = 25V, ID = 25AÂ
âââ âââ 25
âââ âââ 250
µA VDS = 54V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 63
ID = 25A
âââ âââ 14 nC VDS = 44V
âââ âââ 23
VGS = 10V, See Fig. 6 and 13
âââ 12 âââ
VDD = 28V
âââ 60 âââ ns ID = 25A
âââ 44 âââ
RG = 12â¦
âââ 45 âââ
VGS = 10V, See Fig. 10 Â
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contact
S
âââ 1470 âââ
VGS = 0V
âââ 360 âââ
VDS = 25V
âââ 88 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 530Â
150Â mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
 Starting TJ = 25°C, L = 0.48mH
RG = 25â¦, IAS = 25A. (See Figure 12)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 49
A showing the
integral reverse
G
âââ âââ 160
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 25A, VGS = 0V Â
âââ 63 95 ns TJ = 25°C, IF = 25A
âââ 170 260 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 ISD ⤠25A, di/dt ⤠230A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
This is a typical value at device destruction and represents
operation outside rated limits.
 This is a calculated value limited to TJ = 175°C .
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