E24N Datasheet, PDF (2/2 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

E 24N
HEXFET^® Power MOSFET
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I_D = 1mA
R_DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω V_GS = 10V, I_D = 10A „
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
4.5 ––– ––– S V_DS = 25V, I_D = 10A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25 _µA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
Q_g
Total Gate Charge
––– ––– 20
I_D = 10A
Q_gs
Gate-to-Source Charge
––– ––– 5.3 nC V_DS = 44V
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 7.6
V_GS = 10V, See Fig. 6 and 13 „
t_d(on)
Turn-On Delay Time
––– 4.9 –––
V_DD = 28V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
–––
–––
34 –––
19 –––
ns
I_D = 10A
R_G = 24Ω
t_f
Fall Time
––– 27 –––
R_D = 2.6Ω, See Fig. 10 „
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
––– _4.5 –––
Between lead,
6mm (0.25in.)
nH
–––––– _7.5 ––––––
from package
and center of die contact
D
G
S
C_iss
Input Capacitance
––– 370 –––
V_GS = 0V
C_oss
Output Capacitance
––– 140 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 65 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 17
––– ––– 68
MOSFET symbol
A ^{showing the}
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3 V T_J = 25°C, I_S = 10A, V_GS = 0V „
––– 56 83 ns T_J = 25°C, I_F = 10A
––– 120 180 nC di/dt = 100A/µs „
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 1.0mH
R_G = 25Ω, I_AS = 10A. (See Figure 12)
ƒ I_SD ≤ 10A, di/dt ≤ 280A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
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