ET830 Datasheet, PDF (1/5 Pages) Estek Electronics Co. Ltd – 5 Amps，500Volts

5 Amps，500Volts
N-Channel MOSFET
■ Description
The ET830 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 1.5Ω@VGS = 10 V
Low gate charge ( typical 20nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
ET830
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
±30
5.0
5.0^＊
3.0
3.0^＊
20
20^＊
Avalanche Energy
Repetitive (Note 1)
EAR
7.6
Single Pulse (Note 2)
EAS
305
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
PD
Derate above 25℃
76
40
0.6
0.32
Junction Temperature
Storage Temperature
＊
Drain current limited by maximum junction temperature.
TJ
TSTG
+150
-55~+150
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
1
BEIJING ESTEK ELECTRONICS CO.,LTD