ET630 Datasheet, PDF (1/5 Pages) Estek Electronics Co. Ltd – 9 Amps，200Volts N-CHANNEL MOSFET

9 Amps_，200Volts
N-CHANNEL MOSFET
■ DESCRIPTION
The ET630 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ FEATURES
* RDS(ON) = 0.4Ω@VGS = 10 V
* Ultra low gate charge ( typical 19 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
■ SYMBOL
ET630
■ ABSOLUTE MAXIMUM RATINGS(T_c=25℃,unless otherwise specified)
PARAMETER
SYMBOL
PATINGS
Gate-Source Voltage
Drain Currenet
Continuous
Drain-Source Voltage
T_c=25℃
T_c=100℃
V_DSS
V_GSS
I_D
200
±20
9
6.3
Drain Current Pulsed
I_DP
8.0
Avalanche Energy
Repetitive(Note 2)
Single Pulse(Note 3)
E_AR
9
E_AS
150
Peak Diode Recovery dv/dt(Note 4)
dv/dt
3.5
Total Power Dissipation
T_c=25℃
Derate above 25℃
88
P_D
51
Junction Temperature
T_J
+150
UNIT
V
V
A
A
A
mJ
mJ
v/ns
W
W/℃
℃
1
BEIJING ESTEK ELECTRONICS CO.,LTD