ET-840 Datasheet, PDF (1/2 Pages) Estek Electronics Co. Ltd – N-Channel MOSFET

ET- 840
Features
■ R_DS(on) (Max 0.85 Ω )@V_GS=10V
■ Gate Charge (Typical 38nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Integral’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
N-Channel MOSFET
Symbol
1. Gate_{
{ _{2. Drain}
●
◀▲
●
●
{ ^{3. Source}
TO-220
123
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
8.0
5.1
32
±25
320
13.4
5.5
134
1.08
- 55 ~ 150
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
0.93
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 2
Ver.00/21.08.2009
IFP840-TSe.doc
BEIJING ESTEK ELECTRONICS CO.,LTD