ET-7N60 Datasheet, PDF (1/2 Pages) Estek Electronics Co. Ltd – N-Channel MOSFET

ET- 7N60
Features
■ R_DS(on) (Max 1.2 Ω )@V_GS=10V
■ Gate Charge (Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
N-Channel MOSFET
Symbol
1. Gate_{
{ _{2. Drain}
●
◀▲
●
●
{ ^{3. Source}
General Description
This Power MOSFET is manufactured advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
7.0*
4.4*
28*
±30
420
14.7
4.5
48
0.38
- 55 ~ 150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
1
BEIJING ESTEK ELECTRONICS CO.,LTD