BLV8N60 Datasheet, PDF (1/6 Pages) Estek Electronics Co. Ltd – N-channel Enhancement Mode Power MOSFET

• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
BLV8N60
N-channel Enhancement Mode Power MOSFET
BV_DSS
R_DS(ON)
I_D
600V
1.2Ω
7.5A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25^oC unless otherwise noted )
Symbol
V_DS
V_GS
I_D
I_DM
P_D
E_AS
I_AR
E_AR
Tj
T_SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 ^oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 20
7.5
4.6
30
147
1.18
230
7.5
14.7
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
R_{th j-c}
R_{th j-a}
Parameter
Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Max.
-1-
Total 6 Pages
Value
0.85
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o_C
o_C
Units
℃/ W
℃/ W