BLV5N60 Datasheet, PDF (1/6 Pages) Estek Electronics Co. Ltd – N-channel Enhancement Mode Power MOSFET

BLV5N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
BV_DSS
R_DS(ON)
I_D
600V
2.5Ω
4.5A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25^oC unless otherwise noted )
Symbol
V_DS
V_GS
I_D
I_DM
P_D
E_AS
I_AR
E_AR
Tj
T_SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 ^oC)
Drain Current (pulsed) (Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note2)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 20
4.5
2.6
18
104
0.83
218
4.5
10.4
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
R_{th j-c}
R_{th j-a}
Parameter
Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Max.
Value
1.2
62.5
-1-
Total 6 Pages
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o_C
o_C
Units
℃/ W
℃/ W