7N60 Datasheet, PDF (1/5 Pages) Unisonic Technologies – 7.4 Amps, 600 Volts N-CHANNEL MOSFET

7 Amps，600Volts
N-Channel MOSFET
■ Description
The ET7N60 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 1.20Ω@VGS = 10 V
Low gate charge ( typical 29nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
7N60
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
±30
7.0
7.0^＊
4.3
4.3^＊
28
28^＊
Avalanche Energy
Repetitive (Note 1)
EAR
Single Pulse (Note 2)
EAS
15.2
267
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
PD
Derate above 25℃
152
50
1.21
0.40
Junction Temperature
TJ
+150
Storage Temperature
＊
Drain current limited by maximum junction temperature.
TSTG
-55~+150
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
1
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