4N60 Datasheet, PDF (1/5 Pages) Unisonic Technologies – 4 Amps, 600 Volts N-CHANNEL POWER MOSFET

4 Amps，600Volts
N-Channel MOSFET
■ Description
The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) =2.50Ω@VGS = 10 V
Low gate charge ( typical 16nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
4N60
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
TO-220
Ratings
TO-220F
TO-252
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet
Continuous
Tc=25℃
Tc=100℃
VDSS
600
VGSS
±30
4.0
4.0^＊
2.8
ID
2.4
2.4^＊
1.8
Drain Current Pulsed
(Note 1)
IDP
16
16^＊
11.2
Avalanche Energy
Repetitive
(Note 1)
EAR
10.4
4.9
Single Pulse (Note 2)
EAS
180
210
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
Derate above 25℃
104
34
49
PD
0.83
0.27
0.39
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
1
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