2N60 Datasheet, PDF (1/5 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

N2 Amps，600Volts
N-Channel MOSFET
■ Description
The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 5.00Ω@VGS = 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
2N60
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
TO-220
Ratings
TO-220F TO-251
TO-252
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet
Continuous
Tc=25℃
Tc=100℃
VDSS
VGSS
ID
2.0
1.35
600
±30
2.0^＊
1.35^＊
1.9
1.14
Drain Current Pulsed
(Note 1)
IDP
8
8^＊
7.6
Avalanche Energy
Repetitive (Note 1) EAR
5.55
4.4
Single Pulse (Note EAS
130
120
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
PD
55.5
23.6
44
Units
V
V
A
A
A
mJ
mJ
V/ns
W
1
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