F49L160UA_08 Datasheet, PDF (45/50 Pages) Elite Semiconductor Memory Technology Inc. – 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory

ESMT
F49L160UA/F49L160BA
10.4 TEMPORARY SECTOR UNPROTECT Operation
Symbol
T_VIDR
T_RSP
Table 18. Temporary Sector Unprotect
Description
All Speed Options Unit
V_ID Rise and Fall Time (See Note)
Min
500
ns
RESET ^{Setup Time for Temporary Sector} _Min
4
us
Unprotect
Notes:
Not 100% tested
Figure 24. Temporary Sector Unprotect Timing Diagram
10V
RE SE T 0 o r V C C
CE
tV IDR
Pr ogr am or Er ase C om ma nd Se quen ce
0 or VCC
tV IDR
WE
RY/BY
tRS P
Figure 25. DQ6 vs DQ2 for Erase and Erase Suspend Operations
WE
DQ6
Enter Embedded
Erasing
Erase
Su s pen d
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase
Resume
Erase
Suspend
Read
Erase
Erase
Complete
DQ2
Notes :
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an
erase-suspended.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2008
Revision: 1.8
45/50