M52D128168A Datasheet, PDF (4/47 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M52D128168A
Preliminary
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 2.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 2.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
Short circuit current
PD
1
W
IOS
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V_SS = 0V, T_A = 0 to 70 °C )
PARAMETER
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
SYMBOL
VDD, VDDQ
VIH
VIL
VOH
VOL
IIL
IOL
MIN
1.7
0.8xVDDQ
-0.3
VDDQ-0.2
-
-2
-2
TYP
1.8
1.8
0
-
-
-
-
MAX
1.9
VDDQ+0.3
0.3
-
0.2
2
2
Note:
1. VIH(max) = 2.2V AC for pulse width ≤ 3ns acceptable.
2. VIL(min) = -1.0V AC for pulse width ≤ 3ns acceptable.
3. Any input 0V ≤ VIN ≤ VDDQ, all other pins are not under test = 0V.
4. Dout is disabled , 0V ≤ VOUT ≤ VDDQ.
UNIT
V
V
V
V
V
μA
μA
NOTE
1
2
IOH = -0.1mA
IOL = 0.1mA
3
4
CAPACITANCE (V_DD = 1.8V, T_A = 25 °C , f = 1MHZ)
PARAMETER
SYMBOL
MIN
Input capacitance (A0 ~ A11, BA0 ~ BA1)
CIN1
1.5
Input capacitance
(CLK, CKE, CS , RAS , CAS , WE &
CIN2
1.5
L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
COUT
2.0
MAX
3.0
3.5
4.5
UNIT
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
4/47