M12L64164A2Y Datasheet, PDF (4/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks

ESMT
M12L64164A (2Y)
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITION
Operating Current
(One Bank Active)
ICC1
Precharge Standby Current ^ICC2P
in power-down mode
ICC2PS
ICC2N
Precharge Standby Current
in non power-down mode
ICC2NS
Active Standby Current
in power-down mode
ICC3P
ICC3PS
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
ICC3NS
Operating Current
(Burst Mode)
ICC4
Refresh Current
ICC5
Self Refresh Current
ICC6
Burst Length = 1, t_RC ≥ t_RC(min), I_OL = 0 mA,
t_CC = t_CC (min)
CKE ≤ V_IL(max), t_CC = t_CC (min)
CKE & CLK ≤ V_IL(max), t_CC = ∞
CKE ≥ V_IH(min), CS ≥ V_IH(min), t_CC = t_CC (min)
Input signals are changed one time during 2CLK
CKE ≥ VIH(min), CLK ≤ VIL(max), t_CC = ∞
input signals are stable
CKE ≤ VIL(max), t_CC = t_CC (min)
CKE & CLK ≤ VIL(max), t_CC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), t_CC=15ns
Input signals are changed one time during 2clks
All other pins ≥ V_DD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), CLK ≤ VIL(max), t_CC = ∞
input signals are stable
IOL = 0 mA, Page Burst, All Bank active
Burst Length = 4, CAS Latency = 3
tRFC ≥ tRFC(min), t_CC = t_CC(min)
CKE ≤ 0.2V
VERSION
-5 -6 -7
60 50 40
2
1
20
10
8
8
30
25
80 70 60
65 55 45
1
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
UNIT NOTE
mA
1,2
mA
mA
mA
mA
mA
mA 1,2
mA
mA
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2012
Revision: 1.1
4/45