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| M12L2561616A Datasheet, PDF (35/44 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Synchronous DRAM | |||
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ESMT
Read & Write cycle with Auto Precharge @ Burst Length = 4
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2007
Revision: 1.2
35/44
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