M24L28256SA Datasheet, PDF (3/12 Pages) Elite Semiconductor Memory Technology Inc. – 2-Mbit (256K x 8) Pseudo Static RAM

ESMT
M24L28256SA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to
Ground Potential . ............... ............ ...........−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[4, 5, 6] .................................−0.4V to 3.7V
DC Input Voltage[4, 5, 6].................... .........−0.4V to 3.7V
Output Current into Outputs (LOW) ...............................20 mA
Static Discharge Voltage ........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient
Temperature (T_A)
−25°C to +85°C
−40°C to +85°C
V_CC
2.7V to 3.6V
2.7V to 3.6V
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
V_CC
Supply Voltage
V_OH
Output HIGH
Voltage
I_OH = −0.1 mA
V_OL
Output LOW
Voltage
I_OL = 0.1 mA
V_IH
Input HIGH
Voltage
V_IL
Input LOW Voltage
I_IX
Input Leakage
Current
GND ≤V_IN ≤ V_CC
I_OZ
Output Leakage
Current
GND ≤ V_OUT ≤ V_CC , Output
Disable
I_CC
V_CC Operating
Supply Current
f = f_MAX = 1/t_RC
f = 1 MHz
V_CC = 3.6V
I_OUT = 0mA
CMOS levels
Automatic CE
CE ≥ V_CC−0.2V,
I_SB1
Power-Down
Current
V_IN ≥ V_CC − 0.2V, V_IN ≤ 0.2V,
f = fMAX (Address and Data Only),
—CMOS Inputs
f=0
I_SB2
Automatic CE
Power-Down
Current
—CMOS Inputs
CE ≥ V_CC−0.2V,
V_IN ≥ V_CC − 0.2V, V_IN ≤ 0.2V,
f = 0, V_CC = 3.6V
Min.
2.7
V_CC-
0.4
0.8*
V_CC
-0.4
-1
-1
-55
Typ
.[3]
Max.
3.0 3.6
0.4
V_CC+
0.4
0.4
+1
+1
14 22
1
5
40 250
9 40
Min.
2.7
V_CC-
0.4
0.8*
V_CC
-0.4
-1
-1
-70
Typ.
[3]
3.0
8
1
40
9
Max.
3.6
0.4
V_CC
+0.4
0.4
+1
+1
15
5
250
40
Unit
V
V
V
V
V
µA
µA
mA
µA
µA
Capacitance[7]
Parameter
Description
C_IN
C_OUT
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz
V_CC = V_CC(typ)
Max.
8
8
Unit
pF
pF
Thermal Resistance[7]
Parameter
Description
Θ_JA
Thermal Resistance(Junction to Ambient)
Θ_JC
Thermal Resistance (Junction to Case)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
BGA
55
17
Unit
°C/W
°C/W
Notes:
4.V_IH(MAX) = V_CC + 0.5V for pulse durations less than 20 ns.
5.V_IL(MIN) = –0.5V for pulse durations less than 20 ns.
6.Overshoot and undershoot specifications are characterized and are not 100% tested.
7.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1
3/12