M52D128168A_1 Datasheet, PDF (15/47 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
Precharge command
M52D128168A
Operation Temperature Condition -40°C~85°C
( CS , RAS , WE = Low, CAS = High )
This command begins precharge operation of the bank selected by BA1 and BA0
(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.
When A10 is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the DRAM can’t accept the activate command to the
precharging bank during tRP (precharge to activate command period).
This command corresponds to a conventional DRAM’s RAS rising.
Write command
( CS , CAS , WE = Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
( CS , CAS = Low, RAS , WE = High)
Read data is available after CAS latency requirements have been met.
This command sets the burst start address given by the column address.
Elite Semiconductor Memory Technology Inc.
Publication Date: Sep. 2008
Revision: 1.0
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