F25L016A_1 Datasheet, PDF (12/32 Pages) Elite Semiconductor Memory Technology Inc. – 16Mbit (2Mx8) 3V Only Serial Flash Memory

ESMT
Fast-Read (50 MHz ; 100 MHz)
The High-Speed-Read instruction supporting up to 100 MHz is
initiated by executing an 8-bit command, 0BH, followed by
address bits [A₂₃-A₀] and a dummy byte. CE must remain active
low for the duration of the High-Speed-Read cycle. See Figure 3
for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the
High-Speed-Read instruction outputs the data starting from the
specified address location. The data output stream is continuous
F25L016A
Operation Temperature condition -40°C~85°C
through all addresses until terminated by a low to high transition
on CE . The internal address pointer will automatically increment
until the highest memory address is reached. Once the highest
memory address is reached, the address pointer will
automatically increment to the beginning (wrap-around) of the
address space, i.e. for 16Mbit density, once the data from
address location 1FFFFFH has been read, the next output will be
from address location 000000H.
CE
MODE3
SCK MODE0
0 12 3 45 67 8
15 16 23 24
31 32 39 40 47 48 55 56 63 64 71 72
80
SI
0B
ADD.
ADD.
A DD.
MSB
MSB
HIGH IMPENANCE
SO
Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH)
X
N
D OU T
MSB
N+1
DOUT
N+2
DOUT
N+3
D OU T
N+4
D OU T
Figure 3 : HIGH-SPEED-READ SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.2
12/32