M12L64322A_1 Datasheet, PDF (10/46 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Synchronous DRAM

ESMT
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A1
A0
0
0
0
0
1
1
1
0
2
1
1
3
Sequential
1
2
2
3
3
0
0
1
M12L64322A
Operation temperature condition -40°C ~ 85°C
Interleave
3
0
1
2
3
0
1
0
3
2
1
2
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
A2
A1
A0
Sequential
Interleave
0
0
0
0123456701234567
0
0
1
1234567010325476
0
1
0
2345670123016745
0
1
1
3456701232107654
1
0
0
4567012345670123
1
0
1
5670123454761032
1
1
0
6701234567452301
1
1
1
7012345676543210
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision : 1.2
10/46