M24L816512SA Datasheet, PDF (1/14 Pages) Elite Semiconductor Memory Technology Inc. – 8-Mbit (512K x 16) Pseudo Static RAM

ESMT
M24L816512SA
PSRAM
8-Mbit (512K x 16)
Features
‧Advanced low-power architecture
• High speed: 55 ns, 70 ns
• Wide voltage range: 2.7V to 3.6V
• Typical active current: 2 mA @ f = 1 MHz
• Typical active current: 11 mA @ f = f_MAX
• Low standby power
• Automatic power-down when deselected
Functional Description
The M24L816512SA is a high-performance CMOS pseudo
static RAM (PSRAM) organized as 512K words by 16 bits that
supports an asynchronous memory interface. This device
features advanced circuit design to provide ultra-low active
current. This is ideal for portable applications such as cellular
telephones. The device can be put into standby mode when
deselected ( CE HIGH or both BHE and BLE are HIGH).
The input/output pins (I/O0through I/O₁₅) are placed in a
high-impedance state when : deselected ( CE HIGH),
outputs are disabled ( OE HIGH), both Byte High Enable
and
Pseudo Static RAM
Byte Low Enable are disabled ( BHE , BLE HIGH), or during
a write operation ( CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip
Enable( CE LOW) and Write Enable ( WE ) input LOW. If
Byte Low Enable ( BLE ) is LOW, then data from I/O pins (I/O₀
through I/O₇) is written into the location specified on the
address pins(A₀ through A₁₈). If Byte High Enable ( BHE ) is
LOW, then data from I/O pins (I/O₈ through I/O₁₅) is written
into the location specified on the address pins (A₀ through
A₁₈).
Reading from the device is accomplished by taking Chip
Enable ( CE LOW) and Output Enable ( OE ) LOW while
forcing the Write Enable ( WE ) HIGH. If Byte Low Enable
( BLE ) is LOW, then data from the memory location specified
by the address pins will appear on I/O₀ to I/O₇. If Byte High
Enable( BHE ) is LOW, then data from memory will appear on
I/O₈ toI/O₁₅. Refer to the truth table for a complete description
of read and write modes.
Logic Block Diagram
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.5
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