M12L2561616A_08 Datasheet, PDF (1/45 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
SDRAM
M12L2561616A
Operation Temperature Condition -40~85°C
4M x 16 Bit x 4 Banks
Synchronous DRAM
FEATURES
y JEDEC standard 3.3V power supply
y LVTTL compatible with multiplexed address
y Four banks operation
y MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
y All inputs are sampled at the positive going edge of the
system clock
y Burst Read single write operation
y DQM for masking
y Auto & self refresh
y 64ms refresh period (8K cycle)
ORDERING INFORMATION
PRODUCT NO. MAX FREQ. PACKAGE COMMENTS
M12L2561616A-6TIG 166MHz TSOP II
Pb-free
M12L2561616A-6BIG 166MHz
BGA
Pb-free
M12L2561616A-7TIG 143MHz TSOP II
Pb-free
M12L2561616A-7BIG 143MHz
BGA
Pb-free
GENERAL DESCRIPTION
The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Pin Arrangement
VDD 1
DQ0 2
VDDQ 3
DQ1 4
DQ2 5
VSSQ 6
DQ3 7
DQ4 8
VDDQ 9
DQ5 10
DQ6 11
VSSQ 12
DQ7 13
VDD 14
LDQM 15
WE 16
CAS 17
RAS 18
CS 19
BA0 20
BA1 21
A10/AP 22
A0 23
A1 24
A2 25
A3 26
VDD 27
54 VSS
53 DQ15
52 VSSQ
51 DQ14
50 DQ13
49 VDDQ
48 DQ12
47 DQ11
46 VSSQ
45 DQ10
44 DQ9
43 VDDQ
42 DQ8
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 A12
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
1
2
3
4
5
6
7
8
9
A
VSS DQ15 VSSQ
VDDQ DQ0 VDD
B
DQ14 DQ13 VDDQ
C
DQ12 DQ11 VSSQ
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
D
DQ10 DQ9 VDDQ
VSSQ DQ6 DQ5
E
DQ8 NC
VSS
VDD LDQM DQ7
F
UDQM CLK CKE
G
A12
A11
A9
CAS RAS
WE
BA0
BA1
CS
H
A8
A7
A6
J
VSS
A5
A4
A0
A1
A10
A3
A2
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2008
Revision: 1.2
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