F59L1G81A Datasheet, PDF (1/35 Pages) Elite Semiconductor Memory Technology Inc. – Voltage Supply: 2.6V ~ 3.6V

ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V
z Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
z Automatic Program and Erase
- Page Program: (2K + 64) bytes
- Block Erase: (128K + 4K) bytes
z Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.)
z Memory Cell: 1bit/Memory Cell
z Fast Write Cycle Time
- Program time: 200us (Typ.)
- Block Erase time: 1.5ms (Typ.)
z Command/Address/Data Multiplexed I/O Port
z Hardware Data Protection
- Program/Erase Lockout During Power Transitions
z Reliable CMOS Floating Gate Technology
z Endurance:
- 100K Program/Erase Cycles (with 1 bit/528 bytes ECC)
- Data Retention: 10 Years
z Command Driven Operation
z Cache Program Operation for High Performance Program
z Copy-Back Operation
z No Bad-Block-Erasing-Protect function (user should manage
bad blocks before erasing)
F59L1G81A
1 Gbit (128M x 8)
3.3V NAND Flash Memory
ORDERING INFORMATION
Product ID
F59L1G81A -25TG
F59L1G81A -25BG
Speed
25 ns
25 ns
Package
48 pin TSOPI
63 ball BGA
Comments
Pb-free
Pb-free
GENERAL DESCRIPTION
Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit
capacity. The device is offered in 3.3V V_CC. Its NAND cell
provides the most cost effective solution for the solid state mass
storage market. A program operation can be performed in typical
200us on the 2,112-byte page and an erase operation can be
performed in typical 1.5ms on a (128K+4K) bytes block. Data in
the data register can be read out at 25ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output
as well as command input. The on-chip write controller
automates all program and erase functions including pulse
repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take
advantage of this device’s extended reliability of 100K
program/erase cycles by providing ECC (Error Correcting Code)
with real time mapping-out algorithm.
This device is an optimum solution for large nonvolatile storage
applications such as solid state file storage and other portable
applications requiring non-volatility.
Elite Semiconductor Memory Technology Inc.
Publication Date: Oct. 2013
Revision: 1.2
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