F50L1G41A-2Y Datasheet, PDF (1/36 Pages) Elite Semiconductor Memory Technology Inc. – Voltage Supply: 3.3V (2.7V~3.6V)

ESMT
Flash
PRODUCT LIST
Parameters
V_CC
Width
Frequency
Internal ECC Correction
Transfer Rate
Loading Throughput
Power-up Ready Time
Max Reset Busy Time
Note: 1. x2 PROGRAM operation is not defined.
F50L1G41A (2Y)
3.3V 1 Gbit
SPI-NAND Flash Memory
Values
3.3V
x1, x2¹, x4
104MHz
1-bit
9.6ns
104MT/s
1ms (maximum value)
1ms (maximum value)
FEATURES
z Voltage Supply: 3.3V (2.7V~3.6V)
z Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
z Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
z Page Read Operation
- Page Size: (2K + 64) Byte
- Read from Cell to Register with Internal ECC: 100us
z Memory Cell: 1bit/Memory Cell
z Support SPI-Mode 0 and SPI-Mode 3¹
z Fast Write Cycle Time
- Program time:400us
- Block Erase time: 4ms
z Hardware Data Protection
- Program/Erase Lockout During Power Transitions
z Reliable CMOS Floating Gate Technology
- Internal ECC Requirement: 1bit/512Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
z Command Register Operation
z NOP: 4 cycles
z OTP Operation
z Bad-Block-Protect
z Boot Read
Note: 1. Mode 0: CPOL = 0, CPHA = 0; Mode 3: CPOL = 1, CPHA = 1
ORDERING INFORMATION
Product ID
F50L1G41A -104RAG2Y
Speed
104MHz
Package
8-contact LGA 8x6mm
Comments
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.1
1/36