F49L320UA Datasheet, PDF (1/55 Pages) Elite Semiconductor Memory Technology Inc. – 32 Mbit (4M x 8/2M x 16) 3V Only CMOS Flash Memory

ESMT
F49L320UA/F49L320BA
32 Mbit (4M x 8/2M x 16)
3V Only CMOS Flash Memory
1. FEATURES
z Single supply voltage 2.7V-3.6V
z Fast access time: 70/90 ns
z Ready/Busy (RY/ BY )
- RY/BY output pin for detection of program or erase operation
z 4,194,304x8 / 2,097,152x16 switchable by BYTE pin
completion
Compatible with JEDEC standard
z End of program or erase detection
- Pin-out, packages and software commands compatible with - Data polling
single-power supply Flash
- Toggle bits
z Low power consumption
z Hardware reset
- 20mA typical active current
- 25uA typical standby current 
z 100,000 program/erase cycles typically
z 20 Years Data Retention 
z Command register architecture
- Byte Word Programming (9μs/11μs typical)
- Byte Mode : eight 8KB, sixty three 64KB sectors.
- Hardware pin (_RESET ) resets the internal state machine to
the read mode
z Sector Protection /Unprotection
- Hardware Protect/Unprotect any combination of sectors from
a program or erase operation.
z Low V_CC Write inhibit is equal to or less than 2.0V
z Boot Sector Architecture
- Word Mode : eight 4K word, sixty-three 32 K word sectors.
- U = Upper Boot Block
z Auto Erase (chip & sector) and Auto Program
- B = Bottom Boot Block
- Any combination of sectors can be erased concurrently; z Packages available:
Chip erase also provided.
- 48-pin TSOPI
- Automatically program and verify data at specified address
- All Pb-free products are RoHS-Compliant
z Erase Suspend/Erase Resume
- Suspend or Resume erasing sectors to allow the
read/program in another sector
z CFI (Common Flash Interface) complaint
- Provides device-specific information to the system, allowing
host software to easily reconfigure to different Flash devices.
z Secured Silicon Sector
- 128word sector for permanent, secure identification through
an 8- word random Electronic Serial Number
- - May be programmed and locked at the factory or by the
- customer
- Accessible through a command sequence.
2. ORDERING INFORMATION
Part No
Boot Speed
F49L320UA-70TG Upper 70 ns
F49L320BA-70TG Bottom 70 ns
Package
TSOPI
TSOPI
Comments
Pb-free
Pb-free
Part No
F49L320UA-90TG
F49L320BA-90TG
Boot
Upper
Bottom
Speed
90 ns
90 ns
Package
TSOPI
TSOPI
Comments
Pb-free
Pb-free
3. GENERAL DESCRIPTION
The F49L320UA/F49L320BA is a 32 Megabit, 3V only CMOS
Flash memory device organized as 4M bytes of 8 bits or 2M
words of 16bits. This device is packaged in standard 48-pin
TSOP. It is designed to be programmed and erased both in
system and can in standard EPROM programmers.
With access times of 70 ns and 90 ns, the
F49L320UA/F49L320BA allows the operation of high-speed
microprocessors. The device has separate chip enable _CE, write
enable WE , and output enable _OE controls. ESMT’s memory
devices reliably store memory data even after 100,000 program
and erase cycles.
The F49L320UA/F49L320BA is entirely pin and command set
compatible with the JEDEC standard for 32 Megabit Flash
memory devices. Commands are written to
The F49L320UA/F49L320BA features a sector erase architecture.
The device array is divided into eight 8KB, sixty-three 64KB for
byte mode. The device memory array is divided into eight 4K
word, sixty-three 32K word sectors for word mode. Sectors can
be erased individually or in groups without affecting the data in
other sectors. Multiple-sector erase and whole chip erase
capabilities provide the flexibility to revise the data in the
device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory. This can be achieved in-system or via programming
equipment.
A low V_CC detector inhibits write operations on loss of power.
End of program or erase is detected by the Ready/Busy status
pin, Data Polling of DQ7, or by the Toggle Bit I feature on DQ6.
Once the program or erase cycle has been successfully
completed, the device internally resets to the Read mode. The
command register using standard microprocessor write
timings.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008
Revision: 1.1
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