F25L32PA Datasheet, PDF (1/36 Pages) Elite Semiconductor Memory Technology Inc. – 3V Only 32 Mbit Serial Flash Memory with Dual

ESMT
Flash
F25L32PA
3V Only 32 Mbit Serial Flash Memory with Dual
„ FEATURES
y Single supply voltage 2.7~3.6V
y Standard and Dual SPI
y Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz / 86MHz / 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz
(100MHz / 172MHz / 200MHz equivalent Dual SPI)
y Low power consumption
- Active current: 35 mA
- Standby current: 30 μ A
- Deep Power Down current: 5 μ A
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Byte programming time: 7 μ s (typical)
- Page programming time: 1.5 ms (typical)
y Erase
- Chip erase time 25 sec (typical)
- Block erase time 1 sec (typical)
- Sector erase time 90 ms (typical)
y Page Programming
- 256 byte per programmable page
y Lockable 2K bytes OTP security sector
y SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y All Pb-free products are RoHS-Compliant
„ ORDERING INFORMATION
Product ID
Speed
Package
F25L32PA –50PAG
50MHz 8 lead SOIC 200mil
F25L32PA –86PAG
86MHz 8 lead SOIC 200mil
F25L32PA –100PAG
100MHz 8 lead SOIC 200mil
F25L32PA –50PHG
50MHz 16 lead SOIC 300mil
F25L32PA –86PHG
86MHz 16 lead SOIC 300mil
F25L32PA –100PHG
100MHz 16 lead SOIC 300mil
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
„ GENERAL DESCRIPTION
The F25L32PA is a 32Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard and Dual
Serial Peripheral Interface (SPI). ESMT’s memory devices
reliably store memory data even after 100,000 programming and
erase cycles.
The memory array can be organized into 16,384 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 1024 uniform sectors with 4K byte each; 64
uniform blocks with 64K byte each. Sectors can be erased
individually without affecting the data in other sectors. Blocks can
be erased individually without affecting the data in other blocks.
Whole chip erase capabilities provide the flexibility to revise the
data in the device. The device has Sector, Block or Chip Erase
but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.0
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