F25L04UA Datasheet, PDF (1/25 Pages) Elite Semiconductor Memory Technology Inc. – 3V Only 4 Mbit Serial Flash Memory

ESMT
Flash
„ FEATURES
y Single supply voltage 2.7~3.6V
y Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
y Low power consumption
- Active current :40mA
- Standby current : 25 μ A
y Reliability
- 100,000 program/erase cycles typically
- 10 years Data Retention
y Program
- Byte program time 8 μ s(typical)
y Erase
- Chip erase time 11s(typical)
F25L04UA
3V Only 4 Mbit Serial Flash Memory
- Sector erase time 0.7s(typical)
y Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
y SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y Package avalible
- 8-pin SOIC 150-mil
ORDERING INFORMATION
Part No.
Speed Package COMMENTS
F25L04UA -50PG 50MHz 8 lead SOIC Pb-free
F25L04UA -75PG 75MHz 8 lead SOIC Pb-free
F25L04UA -100PG 100MHz 8 lead SOIC Pb-free
GENERAL DESCRIPTION
The F25L04UA is a 4Megabit, 3V only CMOS Serial Flash
memory device. ESMT’s memory devices reliably store memory
data even after 100,000 program and erase cycles.
The F25L04UA features a sector erase architecture. The device
memory array is divided into one 8K bytes, two 4K bytes, one
16K bytes, one 32K bytes, and seven 64K bytes. Sectors can be
erased individually without affecting the data in other sectors.
Whole chip erase capabilities provide the flexibility to revise the
data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
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