F25L016A Datasheet, PDF (1/31 Pages) Elite Semiconductor Memory Technology Inc. – 16Mbit (2Mx8) 3V Only Serial Flash Memory

ESMT
„ FEATURES
y Single supply voltage 2.7~3.6V
y Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz;100MHz
y Low power consumption
- typical active current
- 15 μ A typical standby current
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Byte program time 7 μ s(typical)
y Erase
- Chip erase time 10s(typical)
- Sector erase time 60ms(typical)
F25L016A
16Mbit (2Mx8)
3V Only Serial Flash Memory
block erase time 1sec (typical)
y Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Word-Program operations
y SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y Package available
- 8-pin SOIC 200-mil
ORDERING INFORMATION
Part No.
Speed
Package
F25L016A –50PAG 50MHz 8 lead SOIC
200mil
F25L016A –100PAG 100MHz 8 lead SOIC
200mil
COMMENTS
Pb-free
Pb-free
GENERAL DESCRIPTION
The F25L016A is a 16Megablt, 3V only CMOS Serial Flash
memory device organized as 2M bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L016A features a sector erase architecture. The device
memory array is divided into 512 uniform sectors with 4K byte
each ; 32 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision: 1.2 1/31