F25L004A_1 Datasheet, PDF (1/33 Pages) Elite Semiconductor Memory Technology Inc. – 3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C

ESMT
Flash
F25L004A
Operation Temperature Condition -40 °C ~85 °C
3V Only 4 Mbit Serial Flash Memory
„ FEATURES
y Single supply voltage 2.7~3.6V
y Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
y Low power consumption
- Active current：40mA
- Standby current：75 μ A
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Byte program time 9 μ s(typical)
y Erase
- Chip erase time 4s(typical)
- Block erase time 1sec (typical)
- Sector erase time 90ms(typical)
ORDERING INFORMATION
y Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
y SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y All Pb-free products are RoHS-Compliant
Part No.
Speed
Package
COMMENTS
Part No.
Speed
Package
COMMENTS
F25L004A –50PIG
50MHz
8 lead 150 mil
SOIC
Pb-free
F25L004A –100PAIG 100MHz
8 lead
SOIC
200 mil
Pb-free
F25L004A –100PIG 100MHz
8 lead
SOIC
150 mil
Pb-free
F25L004A –50DIG
50MHz
8 lead 300 mil
PDIP
Pb-free
F25L004A –50PAIG 50MHz
8 lead 200 mil
SOIC
Pb-free
F25L004A –100DIG 100MHz
8 lead
PDIP
300 mil
Pb-free
GENERAL DESCRIPTION
The F25L004A is a 4Megabit, 3V only CMOS Serial Flash
memory device. ESMT’s memory devices reliably store memory
data even after 100,000 program and erase cycles.
The F25L004A features a sector erase architecture. The device
memory array is divided into 128 uniform sectors with 4K byte
each ; 8 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.3
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