PTF102028 Datasheet, PDF (2/7 Pages) Ericsson – 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 102028
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
21
70
Output Pow er
20
65
19
18
17
Gain
16
V_DD = 26 V
I_DQ = 130 mA
60
55
Ef f iciency
50
45
40
15
35
860 880 900 920 940 960
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
0.9
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
58
0.33
150
3.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
Efficiency (%) ⁵⁰
16
12 ^{Gain (dB)}
40
V_DD = 26 V
I_DQ = 130 mA ³⁰
P_OUT = 18 W
0
-205
8
-10
-1105
Return Loss (dB) _-20
4
-025
920
930
940
950
960
Frequency (MHz)
2