PTF102027 Datasheet, PDF (2/6 Pages) Ericsson – 40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor

PTF 102027
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 100 mA
Forward Transconductance
V_DS = 5 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
20
70
Output Power (W)
18
60
Efficiency (%)
16
50
Gain (dB)
14
40
12
V_DD = 26 V
30
I_DQ = 250 mA
10
20
925 930 935 940 945 950 955 960
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
2.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
125
0.714
–40 to +150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
18
70
Gain
16
60
Efficiency
14
50
12
V_DD = 26 V
40
10
I_DQ = 250 mA
30
8
P_OUT = 40 W
20
6
-105
4
0
Return Loss (dB) -30
2
-10
925 930 935 940 945 950 955 960
Frequency (MHz)
2