PTF10111 Datasheet, PDF (2/6 Pages) Ericsson – 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

PTF 10111
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 40 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 0.5 A
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 28 V, P_OUT = 6 W, I_DQ = 75 mA, f = 1.5 GHz)
Power Output at 1 dB Compressed
(V_DD = 28 V, I_DQ = 75 mA, f = 1.5 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 6 W, I_DQ = 75 mA, f = 1.5 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 6 W, I_DQ = 75 mA, f = 1.5 GHz—
all phase angles at frequency of test)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
90
14
Gain
80
70
11
V_DD = 28 V
8
I_DQ = 75 mA
60
50
Efficiency (%) ₄₀
30
20
Output Pow er (W)
10
5
0
1300
1400
1500
1600
1700
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
68
—
Volts
—
1
mA
—
5.0
Volts
0.2
—
Siemens
Symbol Min
G_ps
15.0
P-1dB
6
h_D
45
Y
—
Typ Max Units
16
—
dB
7
—
Watts
50
—
%
—
30:1
—
Broadband Test Fixture Performance
16
60
Efficiency (%)
50
15
Gain (dB)
40
V_DD = 28 V
14
I_DQ = 75 mA
-305
P_OUT = 6 W
-2105
13
Return Loss (dB)
10
-25
12
1450
1475
1500
1525
Frequency (MHz)
0
1550-35
2