PTF10021 Datasheet, PDF (2/6 Pages) Ericsson – 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

PTF 10021
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
15
60
14
Efficiency (%) 50
13
Output Power (W) 40
12
Gain (dB)
11
V_DD = 28 V
I_DQ = 360 mA
10
1300
1400
1500
1600
Frequency (MHz)
30
20
10
1700
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
2.2
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
105
0.6
–40 to +150
1.65
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
60
Gain (dB)
12
50
Efficiency (%) ⁴⁰
10
V_DD = 28 V
- 350
8
I_DQ = 360 mA
P_OUT = 10 W
-1250
Return Loss (dB)
6
-2150
4
1400
1450
1500
1550
Frequency (MHz)
-305
1600
2