English
Language : 

PTB20187 Datasheet, PDF (2/2 Pages) Ericsson – 4 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
PTB 20187
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 10 mA
VBE = 0 V, IC = 10 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 50 mA
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
20
50
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.00 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 50 mA, f = 2.00 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.00 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA,
f = 2.00 GHz—all phase angles at frequency of test)
Symbol Min
Gpe
8
P-1dB
4
ηC
30
Ψ
—
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA)
Z Source
Z Load
e
Typ Max Units
—
—
Volts
—
—
Volts
5
—
Volts
40
—
—
Typ Max Units
10
—
dB
6
—
Watts
—
—
%
—
5:1
—
Frequency
GHz
1.80
1.90
2.00
Z Source
R
jX
14.49
-7.50
12.30
-6.16
10.00
-3.55
Z Load
R
jX
11.49
-10.15
7.23
-6.29
4.41
-1.34
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
5/19/98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98