English
Language : 

PTB20156 Datasheet, PDF (2/3 Pages) Ericsson – 8 Watts, 1350-1850 MHz Microwave Power Transistor
PTB 20156
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
VBE = 0 V, IC = 5 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CES
V(BR)EBO
hFE
Min
50
3.5
—
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz)
Collector Efficiency
(VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz)
Load Mismatch Tolerance
(VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz
—all phase angles at frequency of test)
Symbol Min
Gpe
6.0
ηC
40
Ψ
—
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 22 Vdc, Pout = 20 W)
Z Source
Z Load
e
Typ Max Units
—
—
Volts
5
—
Volts
—
100
—
Typ Max Units
—
—
dB
50
—
%
—
5:1
—
Frequency
MHz
1350
1500
1700
1850
Z Source
R
jX
13.8
-14.0
11.2
-12.8
10.7
-8.4
20.0
-9.3
Z Load
R
jX
4.2
0.0
5.6
0.5
6.0
-1.5
4.2
-2.1
2