PTF10193 Datasheet, PDF (1/6 Pages) Ericsson – 12 Watts, 860-960 MHz GOLDMOS™ Field Effect Transistor

PTF 10193
12 Watts, 860-960 MHz
GOLDMOS Field Effect Transistor
Description
The PTF 10193 is an internally matched, 12–watt GOLDMOS FET
intended for GSM, CDMA and TDMA amplifier applications from 860
to 960 MHz. This device operates at 60% efficiency with 18 dB typical
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Typical Output Power & Efficiency vs.
Input Power
20
70
Efficiency
16
60
12
50
8
V_DD = 26 V
40
4
Output Power I_DQ = 160 mA
30
f = 960 MHz
0
20
0.0
0.2
0.4
0.6
Input Power (Watts)
• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
• 100% Lot Traceability
10193 _{1234A5-1621030045016809A0308}
Package 20259
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 160 mA, f = 960 MHz)
Power Output at 1 dB Compressed
(V_DD = 26 V, I_DQ = 160 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 160 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 160 mA, f = 921 MHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
P-1dB
h
Y
17.0
12
55
—
Typ
18
14
60
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1