PTF10045 Datasheet, PDF (1/6 Pages) Ericsson – 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor

PTF 10045
30 Watts, 1.60–1.65 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10045 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal amplifier applications to 1.65
GHz. It is rated at 30 watts power output. Nitride surface passivation
and gold metallization ensure excellent device lifetime and reliability.
Typical Output Power and Efficiency vs. Input Power
40
60
30
20
10
0
0
Output Power
Efficiency ⁵⁰
40
V_DD = 28V
I_DQ = 380 mA
30
f = 1650 MHz
20
1
2
3
4
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
• Performance at 1650 MHz, 28 Volts
- Output Power = 30 Watts
- Power Gain = 11.5 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• Back Side Common Source
• 100% Lot Traceability
10045 _A-1234569955
Package 20222
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
120
0.7
150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1