PTB20239 Datasheet, PDF (1/3 Pages) Ericsson – 12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor

PTB 20239
12 Watts, 1465–1513 MHz
Cellular Radio RF Power Transistor
Description
The PTB 20239 is a class AB, NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1465 to 1513 MHz.
Rated at 12 watts minimum output power, it may be used for both CW
and PEP applications. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
• 12 Watts, 26 Vdc
• Class AB Characteristics
• Surface Mountable
• Available in Tape and Reel
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
16
12
8
V_CC = 26 V
I_CQ = 25 mA
4
f = 1513 MHz
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20239 _{LOT CODE}
Package 20232
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4
2.0
33
0.189
–40 to +150
5.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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