PTB20216 Datasheet, PDF (1/2 Pages) Ericsson – 6 Watts, 1.8-2.0 GHz RF Power Transistor

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PTB 20216
6 Watts, 1.8–2.0 GHz
RF Power Transistor
Description
The 20216 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency
band. Rated at 6 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
Typical Output Power vs. Input Power
7
V_CC = 26 V
6
I_CQ = 50 mA
f = 1.8 - 2.0 GHz
5
4
3
2
0.0
0.2
0.4
0.6
0.8
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• 6 Watts, 1.80–2.00 GHz
• Class AB Characteristics
• 30% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
20216 _{LOT CODE}
Package 20227
Symbol
V_CER
V_CES
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
1.0
19.7
0.112
–40 to +150
8.9
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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