PTB20195 Datasheet, PDF (1/3 Pages) Ericsson – 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20195
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20195 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
200
160
120
80
40
0
0
V_CC = 26 V
I_CQ = 400 mA Total
f = 900 MHz
5
10
15
20
25
30
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• Class AB Characteristics
• 26 Volt, 900 MHz Characteristics
- Output Power = 150 Watts Min
- Collector Efficiency = 50% Min at 150 Watts
- Gain = 9 dB Typ
• Gold Metallization
• Silicon Nitride Passivated
20195 _{LOT CODE}
Package 20224
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
60
4.0
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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