PTB20191 Datasheet, PDF (1/3 Pages) Ericsson – 12 Watts, 1.78-1.92 GHz RF Power Transistor

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PTB 20191
12 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
• Class AB Characteristics
• 26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP)
• Internal Input Matching
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
25
20
15
10
5
0
0.0
V_CC = 26 V
I_CQ = 100 mA
f = 1.9 GHz
0.5
1.0
1.5
2.0
2.5
3.0
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage (emitter open)
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20191 _{LOT CODE}
Package 20226
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
20
50
4.0
2.8
60
0.34
–40 to +150
2.90
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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