PTB20190 Datasheet, PDF (1/4 Pages) Ericsson – 175 Watts, 470-806 MHz Digital Television Power Transistor

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PTB 20190
175 Watts, 470–806 MHz
Digital Television Power Transistor
Description
The 20190 is a class AB, NPN, common emitter RF power transistor
intended for 28 Vdc operation across the 470 to 806 MHz UHF TV
frequency band. Rated at 175 watts output power, it is specifically
intended to operate uncorrected at 125 watts P-Sync (tested to EIA
Standard 4.1.3, Section 5, Method B for class AB transmitters at 125
watts P-sync) or at a minimum of 175 watts in PEP applications. It
may also be operated at comparable power levels for ATV broad-
casting. Ion implantation, nitride surface passivation and gold metalli-
zation ensure excellent device reliability. 100% lot traceability is
standard.
• 175 Watts, 470–806 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 175 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Gain vs. Frequency
10.5
10.0
9.5
9.0
8.5
V_CC = 28 V
I_CQ = 2 x 100 mA
8.0
Pout = 175 W
7.5
470 526 582 638 694 750 806
Frequency (MHz)
20190 _{LOT CODE}
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
60
4.0
25.0
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
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