PTB20189 Datasheet, PDF (1/3 Pages) Ericsson – UHF TV Linear Power Transistor Cellular Radio RF Power Transistor

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PTB 20189
1 Watt, 900–960 MHz
Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF power transistor intended
for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power and Efficiency vs. Input Power
2.0
80
V_CC = 25 V
1.5 ^ICQ ^{= 175 mA}
60
f = 960 MHz
1.0
40
0.5
20
0.0
0.00
0.02 0.04 0.06 0.08
Input Power (Watts)
0
0.10
• 25 Volt, 900–960 MHz Characteristics
- Output Power = 1 Watt
- Gain = 12 dB Min at 1 Watt
• Class A/AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
20189 _{LOT CODE}
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
0.5
11
0.063
–40 to +150
16.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98